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VBN1204N N-Channel MOSFET

VBN1204N Description

VBN1204N N-Channel 200-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 200 0.038 at VGS = 15 V 0.043 at VGS = 10 V ID .

VBN1204N Features

* TrenchFET® Power MOSFETS
* 175 °C Junction Temperature

VBN1204N Applications

* Power Supply
* Lighting Systems D RoHS COMPLIANT SS D G Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100

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Datasheet Details

Part number
VBN1204N
Manufacturer
VBsemi
File Size
303.47 KB
Datasheet
VBN1204N-VBsemi.pdf
Description
N-Channel MOSFET

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