Datasheet Specifications
- Part number
- VBFB2610N
- Manufacturer
- VBsemi
- File Size
- 220.13 KB
- Datasheet
- VBFB2610N-VBsemi.pdf
- Description
- P-Channel MOSFET
Description
VBFB2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.066 at VGS = - 10 V 0.080 at VGS = - 4.5 V TO.Features
* TrenchFET® Power MOSFETApplications
* Load Switch S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed DrainVBFB2610N Distributors
📁 Related Datasheet
📌 All Tags