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VBFB2610N P-Channel MOSFET

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Description

VBFB2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.066 at VGS = - 10 V 0.080 at VGS = - 4.5 V TO.

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Datasheet Specifications

Part number
VBFB2610N
Manufacturer
VBsemi
File Size
220.13 KB
Datasheet
VBFB2610N-VBsemi.pdf
Description
P-Channel MOSFET

Features

* TrenchFET® Power MOSFET

Applications

* Load Switch S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain

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