VBFB1206N N-Channel MOSFET

VBsemi

Description

VBFB1206N N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.051 at VGS = 10 V TO-251 ID (A) 30 D .

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Datasheet Specifications

Part number: VBFB1206N
Manufacturer: VBsemi
File Size: 336.10 KB
Datasheet: VBFB1206N-VBsemi.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Sour

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VBFB1206N N-Channel MOSFET VBsemi

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