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UJ4C075018K3S - SiC Cascode JFET

Description

The UJ4C075018K3S is a 750V, 18mW G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

  • S (3) w On-resistance RDS(on): 18mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 102nC w Low body diode VFSD: 1.14V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 Marking UJ4C075018K3S Typical.

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Datasheet Details

Part number UJ4C075018K3S
Manufacturer UnitedSiC
File Size 761.66 KB
Description SiC Cascode JFET
Datasheet download datasheet UJ4C075018K3S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UJ4C075018K3S CASE CASE D (2) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-3L, 750 V, 18 mohm Rev. B, January 2025 Description The UJ4C075018K3S is a 750V, 18mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
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