Datasheet4U Logo Datasheet4U.com

UJ4C075018K4S - 750V SiC Cascode JFET

General Description

The UJ4C075018K4S is a 750 V, 18 mW G4 SiC FET.

unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • On-Resistance RDS(on) : 18 mW (typ).
  • Operating Temperature: 175 C (max).
  • Excellent Reverse Recovery: Qrr = 102 nC.
  • Low Body Diode VFSD: 1.14 V.
  • Low Gate Charge: QG = 37.8 nC.
  • Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive.
  • Low Intrinsic Capacitance.
  • ESD Protected: HBM Class 2.
  • TO247-4 Package for Faster Switching, Clean Gate Waveforms.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UJ4C075018K4S SiC Cascode JFET UnitedSiC
UJ4C075018K3S SiC Cascode JFET UnitedSiC
UJ4C075023B7S 750V SiC Cascode JFET UnitedSiC
UJ4C075023K3S SiC Cascode JFET UnitedSiC
UJ4C075023K4S SiC Cascode JFET UnitedSiC

Other Datasheets by onsemi

Part Number Description
UJ4C075044K3S 750V SiC Cascode JFET
UJ4C075044K4S SiC Cascode JFET
UJ4C075060K3S SiC Cascode JFET
UJ4N075005K4S SiC JFET
UJ4SC075006K4S 750V SiC Cascode JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐4, 750 V, 18 mohm UJ4C075018K4S Description The UJ4C075018K4S is a 750 V, 18 mW G4 SiC FET. It is based on unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices. Available in the TO247-4 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.