UHB100SC12E1BC3-N - 1200V SiC Half-Bridge

UnitedSiC

The UHB100SC12E1BC3-N by UnitedSiC is a 1200V SiC Half-Bridge. Below is the official datasheet preview.

📥 Download Datasheet

UHB100SC12E1BC3-N 1200V SiC Half-Bridge by UnitedSiC - Datasheet Preview — Official preview page of the **UHB100SC12E1BC3-N** 1200V SiC Half-Bridge datasheet (UnitedSiC).

Datasheet Details

Part number	UHB100SC12E1BC3-N
Manufacturer	UnitedSiC
File Size	243.85 KB
Description	1200V SiC Half-Bridge
Datasheet	UHB100SC12E1BC3-N-UnitedSiC.pdf
Additional preview pages of the UHB100SC12E1BC3-N datasheet.

UHB100SC12E1BC3-N Product details

Description

9mΩ - 1200V SiC Half-Bridge Module | UHB100SC12E1BC3-N Datasheet United Silicon Carbide's SiC FET products feature a stacked cascode formed using its high-performance G3 Fast SiC JFETs with a optimized MOSFET to produce the only standard gate drive SiC device on the market today.This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.These devices are excellent for switching inductive loads, and any application requiring

Features

Typical on-resistance RDS(on),typ of 9mΩ.
Maximum junction temperature of 175°C.
Excellent reverse recovery.
Low gate charge.
Low COSS.
ESD protected, HBM class 2 Part Number UHB100SC12E1BC3-N Package E1B Marking UHB100SC12E1BC3-N Typical.

📁 UHB100SC12E1BC3-N Similar Datasheet

UHB100SC12E1BC3N - SiC Cascode JFET (Qorvo)
UHB10FT - Ultrafast Recovery Rectifier (Vishay Siliconix)
UHB20FCT - Dual Common-Cathode Ultrafast Recovery Rectifier (Vishay Siliconix)
UHBM45 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS15-1 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS15-2 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS30-1 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS30-2 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

Other Datasheets by UnitedSiC

Published: Apr 14, 2025 |