UHB100SC12E1BC3-N - 1200V SiC Half-Bridge

UnitedSiC

General Description

United Silicon Carbide's SiC FET products feature a stacked cascode formed using its high-performance G3 Fast SiC JFETs with a optimized MOSFET to produce the only standard gate drive SiC device on the market today.

Key Features

Typical on-resistance RDS(on),typ of 9mΩ.
Maximum junction temperature of 175°C.
Excellent reverse recovery.
Low gate charge.
Low COSS.
ESD protected, HBM class 2 Part Number UHB100SC12E1BC3-N Package E1B Marking UHB100SC12E1BC3-N Typical.

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UHB100SC12E1BC3-N 1200v sic half-bridge by UnitedSiC - Datasheet Preview

Datasheet Details

Part number	UHB100SC12E1BC3-N
Manufacturer	UnitedSiC
File Size	243.85 KB
Description	1200V SiC Half-Bridge
Datasheet	UHB100SC12E1BC3-N Datasheet

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Description 9mΩ - 1200V SiC Half-Bridge Module | UHB100SC12E1BC3-N Datasheet United Silicon Carbide's SiC FET products feature a stacked cascode formed using its high-performance G3 Fast SiC JFETs with a optimized MOSFET to produce the only standard gate drive SiC device on the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.