UF3C170400K3S Datasheet (UnitedSiC)

UF3C170400K3S, MOSFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE

UF3C170400K3S Features

* w Typical on-resistance RDS(on),typ of 410mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modul