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EC2612-99F - 40GHz Super Low Noise pHEMT

EC2612-99F Description

EC2612-99F 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor .
The EC2612-99F is based on a 0.

EC2612-99F Features

* low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required. D: Drain G: Gate S: Source Main Feat

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40GHz Super Low Noise pHEMT United Monolithic Semiconductors
United Monolithic Semiconductors EC2612-99F-like datasheet

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