CHA8100 - X-band HBT High Power Amplifier

United Monolithic Semiconductors

📥 Download Datasheet

CHA8100 Datasheet Preview — Preview of CHA8100 PDF

Datasheet Details

Part number	CHA8100
Manufacturer	United Monolithic Semiconductors
File Size	251.03 KB
Description	X-band HBT High Power Amplifier
Datasheet	CHA8100-UnitedMonolithicSemiconductors.pdf

CHA8100 Product details

Description

The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. an analogue biasing circuit that makes it less sensitive to spread and chip environment. an integrated TTL interface that enables to switch the HPA with a current consumption lower than 1mA The circuit is 100% DC and RF tested on wafer to ensure

Features

11W output power in pulse mode High gain: > 18dB @ 10GHz High PAE: 40% @ 10GHz Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit Chip size: 4.9 x 3.

📁 CHA8100 Similar Datasheet

CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

Other Datasheets by United Monolithic Semiconductors

CHA8100-99F - X-band HBT High Power Amplifier
CHA8012-99F - C Band High Power Amplifier
CHA8054-99F - 20W X-Band High Power Amplifier
CHA8212-99F - 25W X-Band High Power Amplifier
CHA8252-99F - 10W K-Band High Power Amplifier
CHA8262-99F - 27.5 - 31.5 GHz 12W HPA

Published: Nov 28, 2016 |