CHA6710-99F - 5W X Band Medium Power Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number	CHA6710-99F
Manufacturer	United Monolithic Semiconductors
File Size	1.71 MB
Description	5W X Band Medium Power Amplifier
Datasheet	CHA6710-99F-UnitedMonolithicSemiconductors.pdf

CHA6710-99F Product details

Description

V+ The CHA6710-99F is a two stage Medium Power Amplifier operating between 8 and 12.75GHz.It typically provides 5W of saturated output power and 36% of power added efficiency.In Out It is designed for a wide range of STG1 STG2 applications, from military to commercial communication systems.The circuit is manufactured with a GaN pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.V- It is available in chip form.

Features

Frequency range: 8-12.75GHz.
High output power: 5.5W.
High PAE: 36%.
Linear Gain: 23.5dB.
DC bias: Vd=25Volt @ Idq=0.2A.
Chip size 2.7x2.15x0.1mm.
Available in bare die Main Electrical Characteristics Tamb. = +25°C, Vd = +25V, Idq = 200mA, Pulse width=25µs, Duty cycle =10% Symbol Parameter Min Typ Max Freq Frequency range 8 12.75 Gain Linear Gain 23.5 Pout Output Power 5.5 PAE Associated Power Added Efficiency 36 Unit GHz dB W % Ref. : DSCHA6710.

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Published: Jan 26, 2025 |