UF640-P Datasheet (Unisonic Technologies)

UF640-P, N-CHANNEL POWER MOSFET

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.

The UF640-P suitable for resonant and PWM converter topologies.

UF640-P Features

* RDS(ON) =0.18Ω@ VGS=10V, ID=10A

* Ultra Low gate charge (typical 43nC)

* Low reverse transfer capacitance (CRSS = typical 100 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL 1 Power MOSFET TO-220