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UF640 - N-CHANNEL POWER MOSFET

Description

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.

The UF640 suitable for resonant and PWM converter topologies.

Features

  • S.
  • RDS(ON) < 0.18Ω @ VGS=10V, ID=10A.
  • Ultra Low gate charge (typical 43nC).
  • Low reverse transfer capacitance (CRSS = typical 100 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2015 Unisonic Technologies Co. , Ltd 1 of 6 QW-R502-066.I UF640.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UF640 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies.  FEATURES * RDS(ON) < 0.18Ω @ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-066.
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