UF640 Datasheet (UTC) - N-CHANNEL POWER MOSFET

UF640, N-CHANNEL POWER MOSFET

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.

The UF640 suitable for resonant and PWM converter topologies.

UF640 Features

* RDS(ON) < 0.18Ω @ VGS=10V, ID=10A

* Ultra Low gate charge (typical 43nC)

* Low reverse transfer capacitance (CRSS = typical 100 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Power MOSFET www.unisonic