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UF630 - N-CHANNEL POWER MOSFETS

General Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Overview

UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER.

Key Features

  • S.
  • RDS(ON) < 0.4Ω@ VGS = 10V, ID = 5.0A.
  • Ultra Low Gate Charge ( typical 19 nC ).
  • Low Reverse Transfer Capacitance ( CRSS = typical 80 pF ).
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability.
  • SYMBOL 11 TO-220 TO-220F 11 TO-220F1 TO-220F2 1 TO-262 1 TO-263 1 TO-251 1 TO-252 SOP-8.