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8NM60 - N-CHANNEL POWER MOSFET

Description

The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A.
  • Fast Switching Capability.
  • Avalanche Energy Tested.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 8NM60 8.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.
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