8NM65-SH - N-CHANNEL POWER MOSFET

Description

The UTC 8NM65-SH is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) < 0.78Ω @ VGS = 10V, ID = 4.0A.
Fast Switching Capability.
Avalanche Energy Tested.
Improved dv/dt Capability, High Ruggedness.
SYMBOL Power MOSFET.

Unisonic Technologies

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Datasheet Details

Part number	8NM65-SH
Manufacturer	Unisonic Technologies
File Size	208.89 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	8NM65-SH Datasheet
Additional preview pages of the 8NM65-SH datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 8NM65-SH Preliminary 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8NM65-SH is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) < 0.78Ω @ VGS = 10V, ID = 4.

Published: Feb 14, 2017 |