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UTG7N65-S - 650V TRENCH GATE FIELD-STOP IGBT

General Description

The UTC UTG7N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.

The UTC UTG7N65-S is suitable for the resonant or soft switching applications.

FEAT

Key Features

  • High switching speed.
  • High avalanche ruggedness.
  • Low saturation voltage: VCE(SAT). Typ. =1.5V @ IC=7.0A, VGE=15V (TC =25°C).
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTG7N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG7N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG7N65-S is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=7.