UTG30N65-S Datasheet (UTC) - 650V TRENCH GATE FIELD-STOP IGBT

UTG30N65-S, 650V TRENCH GATE FIELD-STOP IGBT

The UTC UTG30N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.

The UTC UTG30N65-S is suitable for the resonant or soft switching applications.

* FE

UTG30N65-S Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=30A, VGE=15V (TC =25°C)

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG30N65L-TA3-T UTG30N65G-TA3-T TO-220 UTG30N65L-TF1-T UTG30N65G-