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UTG25N120 - 1200V NPT IGBT

Description

The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc.

Features

  • High switching speed.
  • High avalanche ruggedness.
  • Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C.
  • Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UTG25N120 is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.
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