UT2312H - N-CHANNEL POWER MOSFET

Name: UT2312H
SKU: UT2312H-1521924

UTC

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Datasheet Details

Part number	UT2312H
Manufacturer	UTC
File Size	394.04 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	UT2312H-UTC.pdf

UT2312H Product details

Description

The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.This device is suitable for use as a load switch or in PWM applications.

Features

S.
RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A.
RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A.
Advanced trench process technology.
Excellent thermal and electrical capabilities.
High density cell design for ultra low on-resistance.
SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 1.Gate 2.Source.

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Published: Nov 18, 2023 |