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UT2315-H - P-CHANNEL MOSFET

Description

The UTC UT2315-H is P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • S.
  • Extremely low on-resistance due to high density cell.
  • Perfect thermal performance and electrical capability with advanced technology of trench process.
  • SYMBOL Power MOSFET.

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UNISONIC TECHNOLOGIES CO., LTD UT2315-H Preliminary -3.3A, -20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT2315-H is P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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