USGR028N85 Datasheet (UTC) - N-CHANNEL POWER MOSFET

USGR028N85, N-CHANNEL POWER MOSFET

The UTC USGR028N85 is a uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequen

USGR028N85 Features

* RDS(ON) ≤ 2.8 mΩ @ VGS=10V, ID=50A

* Excellent gate charge

* Very low on-resistance RDS(ON)

* High switching speed

* Low reverse transfer capacitance

* SYMBOL POWER MOSFET

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free USGR028N85L-TA3-T USGR028N85G