USG170N03 Datasheet (UTC) - N-CHANNEL MOSFET

USG170N03, N-CHANNEL MOSFET

The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

The UTC USG170N03 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency

USG170N03 Features

* RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.5V, ID=25A

* Optimized for high speed switching, Logic level

* Enhanced Body diode dv/dt capability

* Enhanced Avalanche Ruggednessy

* SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3)