USG70N11 Datasheet (UTC) - N-CHANNEL MOSFET

USG70N11, N-CHANNEL MOSFET

The UTC USG70N11 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

The UTC USG70N11 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency c

USG70N11 Features

* RDS(ON) ≤ 12.5 mΩ @ VGS=10V, ID=15A RDS(ON) ≤ 19 mΩ @ VGS=4.5V, ID=8.0A

* Optimized for high speed switching, Logic level

* Enhanced Body diode dv/dt capability

* Enhanced Avalanche Ruggednessy

* SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3)