1N60P

The 1N60P is 600V 1.2A N-CHANNEL POWER MOSFET designed by UTC.

Product Overview

UTC

1N60P 600V 1.2A N-CHANNEL POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – 1N60P

Datasheet Details

Part number	1N60P
Manufacturer	UTC
File Size	305.48 KB
Description	600V 1.2A N-CHANNEL POWER MOSFET
Datasheet	1N60P-UTC.pdf
Additional preview pages of the 1N60P datasheet.

Product details

Description

The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic.

Features

S.
RDS(ON) =11.5Ω@VGS = 10V.
Ultra Low gate charge (typical 5.0nC).
Low reverse transfer capacitance (CRSS = typical 3.0 pF).
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL Power MOSFET.

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Published: Dec 31, 2017 |