1N60

The 1N60 is 1.2A 600V N-CHANNEL MOSFET designed by UTC.

Product Overview

UTC

1N60 1.2A 600V N-CHANNEL MOSFET by UTC - Datasheet Preview — Datasheet preview – 1N60

Datasheet Details

Part number	1N60
Manufacturer	UTC
File Size	544.80 KB
Description	1.2A 600V N-CHANNEL MOSFET
Datasheet	1N60_UTC.pdf
Additional preview pages of the 1N60 datasheet.

Product details

Description

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) ≤ 11.5Ω @ VGS=10V, ID=0.6A.
Ultra Low gate charge (typical 5.0nC).
Low reverse transfer capacitance (CRSS = typical 3.0 pF).
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2018 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-052.Q 1N60.

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Other Datasheets by UTC

1N60P - 600V 1.2A N-CHANNEL POWER MOSFET

Published: Apr 14, 2007 |