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PKC50DY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 1.65mΩ @VGS = 10V
30V 9.5mΩ @VGS = 10V
ID CH. 120A Q2 37A Q1
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH.
LIMITS
Drain-Source Voltage
Q2 VDS
Q1
30 30
Gate-Source Voltage
Q2 VGS
Q1
±20 ±20
Continuous Drain Current3
TC = 25 °C TC = 100 °C
Q2 Q1 ID Q2 Q1
120 37 76 23
Pulsed Drain Current1
Q2 IDM Q1
200 70
Continuous Drain Current
TA = 25 °C TA = 70 °C
Q2 Q1 ID Q2 Q1
27 10 22 8.1
Avalanche Current
Q2 IAS
Q1
62 22
Avalanche Energy
L = 0.1mH
Q2 EAS
Q1
192 24
Power Dissipation
TC = 25 °C TC = 100 °C
Q2 Q1 PD Q2 Q1
48 25 19 10
REV 1.
PKC50DY Datasheet
