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PKCH2BB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 0.99mΩ @VGS = 10V
ID4 229A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current4 Pulsed Drain Current1 Continuous Drain Current
TC = 25 °C TC = 100 °C
TA = 25 °C TA= 70 °C
ID IDM ID
228 145 350
A 50 40
Avalanche Current
IAS 86
Avalanche Energy
L =0.1mH
EAS
369.8
mJ
Power Dissipation
TC = 25 °C TC = 100 °C
PD
104 W
41
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
5 W
3.
PKCH2BB Datasheet
