PI632BZ Datasheet (UNIKC)

PI632BZ, MOSFET

PI632BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.7mΩ @VGS = 10V ID 105A TO-251(IS) 1.GATE 2.DRAIN 3.SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 105 66 200 Avalanche Current IAS 40.8 Avalanche Energy L = 0.1mH EAS 83 Power Dissipation TC = 25