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QM2608N8 - MOSFETs

Description

The QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 48mΩ 70mΩ ID 3.8A -3.4A.

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Datasheet Details

Part number QM2608N8
Manufacturer UBIQ
File Size 406.25 KB
Description MOSFETs
Datasheet download datasheet QM2608N8 Datasheet

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QM2608N8 N-Ch and P-Ch Fast Switching MOSFETs General Description The QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2608N8 meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 48mΩ 70mΩ ID 3.8A -3.
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