QM2608N8 Datasheet (UBIQ)

QM2608N8, MOSFETs

The QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

The QM2608N8 meet the RoHS and Green Product requirement with full function reliabil

QM2608N8 Features

* z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 48mΩ 70mΩ ID 3.8A -3.4A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Net