XP152A12C0MR Datasheet (Tuofeng Semiconductor)

XP152A12C0MR, Power MOS FET

The XP152A12C0MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 pac

XP152A12C0MR Features

* Low on-state resistance : Rds (on) = 0.3Ω ( Vgs = -4.5V ) Rds (on) = 0.5Ω ( Vgs = -2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -2.5V High density mounting : SOT - 23 Pin Configuration D 3 12 GS SOT - 23 Top View Equivalent Circuit 3 12 P - Channel MOS FET