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XP152A12C0MR-G - POWER MOS FET

Download the XP152A12C0MR-G datasheet PDF. This datasheet also covers the XP152A12C0MR variant, as both devices belong to the same power mos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

Features

  • Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V : Rds(on) = 0.5Ω@ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free.
  • PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (XP152A12C0MR_TorexSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Torex Semiconductor

Part Number Description
XP152A12C0MR POWER MOS FET
XP152A12COMR Power MOS FET
XP152A11E5MR-G Power MOSFET
XP152A01D8MR Power MOS FET
XP151A11B0MR POWER MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XP152A12C0MR-G Power MOSFET ETR1121_003 ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V : Rds(on) = 0.5Ω@ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.
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