XP151A11B0MR Datasheet | Torex Semiconductor

NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.17Ω (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP151A11B0MR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.12Ω ( Vgs = 10V ) : Rds (on) = 0.17Ω ( Vgs = 4.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 4.5V High density mounting : SOT-23 PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage...