Datasheet Specifications
- Part number
- TSB8N60M
- Manufacturer
- Truesemi
- File Size
- 267.15 KB
- Datasheet
- TSB8N60M-Truesemi.pdf
- Description
- N-Channel MOSFET
Description
TSB8N60M / TSI8N60M TSB8N60M / TSI8N60M 600V N-Channel MOSFET General .
Features
* - 7.5A, 600V, RDS(on) = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,TSB8N60M Distributors
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