TSB10N60M - N-Channel MOSFET

Name: TSB10N60M
SKU: TSB10N60M-1108714

Truesemi

Datasheet Details

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

- 10A, 600V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage.

📁 TSB10N60M Similar Datasheet

TSB1132 - Low Frequency PNP Transistor (Taiwan Semiconductor Company)
TSB1184 - Low Vce(sat) PNP Transistor (Taiwan Semiconductor)
TSB1184A - Low Vce(sat) PNP Transistor (Taiwan Semiconductor Company)
TSB12LV01B - TSB12LV01B IEEE 1394-1995 High-Speed Serial-Link-Layer Controller (ETCTI)
TSB12LV01B-EP - IEEE 1394-1995 High-Speed Serial-Bus Link-Layer Controller (ETCTI)
TSB12LV21B - IEEE 1394 Link Layer Controller (ETCTI)
TSB12LV21B-EP - IEEE 1394 Link Layer Controller (ETCTI)
TSB12LV21BI - IEEE 1394 Link Layer Controller (ETCTI)

Other Datasheets by Truesemi

Published: Apr 13, 2017 |