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TSB4N60M N-Channel MOSFET

TSB4N60M Description

TSB4N60M / TSI4N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

TSB4N60M Features

* 4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V
* Low gate charge ( typical 16nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise note

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Datasheet Details

Part number
TSB4N60M
Manufacturer
Truesemi
File Size
228.67 KB
Datasheet
TSB4N60M-Truesemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Truesemi
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