Datasheet Specifications
- Part number
- AGR18060E
- Manufacturer
- TriQuint Semiconductor
- File Size
- 437.04 KB
- Datasheet
- AGR18060E_TriQuintSemiconductor.pdf
- Description
- Lateral MOSFET
Description
AGR18060E 60 W, 1805 MHz *1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxi.
Features
* Typical EDGE performance: 1880 MHz, 26 V, IDQ = 500 mAApplications
* It is packaged in an industry-standard package and is capable of delivering a minimum output power of 60 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR18060EU AGAGR18060E Distributors
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