AGR18045E Datasheet (TriQuint Semiconductor)

AGR18045E, Lateral MOSFET

AGR18045E 45 W, 1.805 GHz 1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications.

This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability.

AGR18045E Features

* Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 15 W)

* Error vector magnitude (EVM): 1.9% www.DataSheet4U.com

* Power gain: 15 dB

* Drain efficiency: 32%

* Modulation spectrum: @ ±400 kHz =

* 63 dBc. @ ±600 kHz =

* 73 dBc. Typical contin