TPH3208PS Datasheet (Transphorm)

TPH3208PS, 650V GaN FET

The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower ga

TPH3208PS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient