Datasheet Details
Part number:
TP120H058WS
Manufacturer:
Transphorm
File Size:
1.41 MB
Description:
1200v gan fet.
JEDEC qualified GaN technology, Dynamic RDS(on)eff production tested, Robust design, defined by, Wide gate safety...
Datasheet Details
Part number:
TP120H058WS
Manufacturer:
Transphorm
File Size:
1.41 MB
Description:
1200v gan fet.
TP120H058WS Description
The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen III platformIt combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen III GaN platform uses advanced epi simpli
Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover lo
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