TC1101 - Low Noise and Medium Power GaAs FETs

Name: TC1101
SKU: TC1101-589764

Transcom

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Datasheet Details

Part number	TC1101
Manufacturer	Transcom
File Size	157.24 KB
Description	Low Noise and Medium Power GaAs FETs
Datasheet	TC1101_Transcom.pdf

TC1101 Product details

Description

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range.

Features

Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO.

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Published: Jul 9, 2007 |