Datasheet Details
| Part number | TC1601 |
|---|---|
| Manufacturer | TRANSCOM |
| File Size | 104.13 KB |
| Description | 2W High Linearity and High Efficiency GaAs Power FETs |
| Datasheet |
 TC1601 Datasheet
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| Part number | TC1601 |
|---|---|
| Manufacturer | TRANSCOM |
| File Size | 104.13 KB |
| Description | 2W High Linearity and High Efficiency GaAs Power FETs |
| Datasheet |
TC1601 Datasheet
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The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency.The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance.The short gate length enables the device to be used in circuits up to 20 GHz.All devices are 100 % DC tested to assure consistent quality.Bond pads are gold plated
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