TPH8R80ANH - Field Effect Transistor

Toshiba

Datasheet Details

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 13 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-05-10 Rev.1.0 Free Datasheet http://www. datasheet4u. com/ TPH8R80ANH 4. Absolute Maximum Ratings (Note) (Ta = 2.

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Published: Nov 11, 2013 |