TPH6R003NL - MOSFET

Toshiba

Datasheet Details

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 4.3 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain curre.

📁 Related Datasheet

TPH60A-LTC - Current Transducers (Topstek)
TPH0303DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0305DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0503DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0505D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0505DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0505S - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH0509D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)

📌 All Tags

Toshiba TPH6R003NL-like datasheet

TPH6R003NL Stock/Price