TPH5200FNH - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 44 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH5200FNH SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2013-10 2019-10-18 Rev.5.0 TPH5200FNH 4.

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