TPCA8A08-H Datasheet - Toshiba

TPCA8A08-H, Silicon N-Channel MOSFET

TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-

Applications

* Notebook PC Applications Portable Equipment Applications
* Built-in a schottky barrier diode Low forward voltage: VDSF =
* 0.6 V (max)
* High-speed switching
* Small gate charge: QSW = 11 nC (typ.
)
* Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.
) (VGS

TPCA8A08-H-Toshiba.pdf