TPCA8A09-H Datasheet - Toshiba Semiconductor

TPCA8A09-H, MOSFET

TPCA8A09-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A09-H 1.

Features

* (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 17 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.
) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode:

TPCA8A09-H-ToshibaSemiconductor.pdf