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TOSHIBA Photocoupler IRED & Photo-IC
TLP250F(INV)
TLP250F(INV)
Transistor Inverter Inverters for Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive
The TOSHIBA TLP250F(INV) consists of an infrared emitting diode and a integrated photodetector. This unit is 8-lead DIP. TLP250F(INV) is suitable for gate driving circuit of IGBT or power MOS FET.
Input Threshold Current : IF=5mA(max)
Supply Current
: 11mA(max)
Supply Voltage
: 10 to 35V
Output Current
: ±1.5A(max)
Switching Time(tpLH/tpHL) : 0.5μs(max)
Isolation Voltage
: 2500Vrms(min)
UL-recognized
: UL 1577,File No.E67349
cUL-recognized
: CSA Component Acceptance Service
No.5A File No.E67349
VDE-Approved
: EN 60747-5-5 (Note 1)
Unit : mm
TOSHIBA
11−10C402S
Weight: 0.54 g (typ.
TLP250F-INV Datasheet
