TK6P53D Datasheet - Toshiba

TK6P53D N-Channel MOSFET

TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6P53D Switching Regulator Applications Unit: mm 1.08±0.2 Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 6.6 ± 0.2 5.34 ± 0.13 0.58MAX 6.1 ± 0.12 +0.4 10.0 0.6 1.01MAX Absolute Maximum R.

TK6P53D Datasheet (201.29 KB)