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TK62Z60X - Silicon N-channel MOSFET

Toshiba

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Datasheet Details

Part number	TK62Z60X
Manufacturer	Toshiba
File Size	278.27 KB
Description	Silicon N-channel MOSFET
Datasheet	TK62Z60X-Toshiba.pdf

TK62Z60X Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 3.1 mA) 3. Packaging and Internal Circuit TK62Z60X TO-247-4L(T) 1. Drain (Heat sink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. ©2016-2017 Toshiba Electroni.

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Published: Jan 3, 2024 |