TK62J60W5 - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK62J60W5
Manufacturer	Toshiba Semiconductor
File Size	239.93 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK62J60W5-ToshibaSemiconductor.pdf

(1) (2) (3) (4) Fast reverse recovery time: trr = 170 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.036 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 3.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cur.

📁 TK62J60W5 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 20, 2014 |